The HS281L/H is an omnipolar Hall effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS281L/H provides an embedded controlled clock mechanism to provide a clock source forthe Hall device and analog signal processing circuit. At the same time, this controlled clock mechanism can send acontrol signal to make the circuit with large current consumption periodically enter the "sleep" mode; through thismechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Halldevice according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the"operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. In the "sleep" cycle, the output transistor is locked in its previous state. In battery

powered applications, this design provides the best support for extending the working life.

The output transistors of the HS281L/H are locked in the on (BOP) state when a strong south or north magnetic field is present on the package marking side, and locked in the off (BRP) state when no magnetic field is present.