HS475 is an omnipolar Hall effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS475 provides an embedded controlled clock mechanism to provide a clock source for the Hall device and analog signal processing circuit. At the same time, this controlled clock mechanism can send a control signal to make the circuit with high current consumption periodically enter the "sleep" mode; through this mechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Hall device according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. During the "sleep" cycle, the output transistor is locked in the previous state. In battery-powered applications, this design provides the best support for extending the working life.

The output transistor of HS475 will be locked in the open (BOP) state when there is a certain strong south or north magnetic field on the side facing the package marking, and locked in the closed (BRP) state when there is no magnetic field.

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